Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement

Yoshinori Matsui; Shu Seki; Shiro Matsui; Seiichi Tagawa; Shigeo Irie; Toshiro Itani

doi:10.1117/12.534742

14 May 2004 Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement

Yoshinori Matsui, Shu Seki, Shiro Matsui, Seiichi Tagawa, Shigeo Irie, Toshiro Itani

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534742
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Effect of protecting groups to outgassing characteristics of F₂ resists was investigated by using in-situ quadrupole mass spectrometry. The base polymers employed were protected fluorocyclic polymers (FCPs). The protecting groups employed were methoxymethyl (MOM), t-butoxycarbonyl (t-BOC), methoxyethoxymethyl (MOEOM), n-hexanoxymethyl (HOM), and neopentanoxymethyl (NOM) groups. Mass spectra of outgassed species were measured by quadrupole mass spectrometer in the exposure of FCPs with and without photoacidgenerators (PAGs). Kinetic traces of mass spectral intensity were also measured with regard to some noteworthy outgassed species related to deblocking reactions of protecting groups. In the exposure of FCP-HOM with PAGs and FCP-NOM with PAGs, one of the outgassed species related to deblocking reactions are mainly produced only during exposure although that kind of outgassed species originate from irradiated FCP-MOM with PAGs, FCP-MOEOM with PAGs, and FCP-t-BOC with PAGs not only during exposure but also after exposure. Some outgassed species related to the deblocking reactions after exposure are depressed by selecting appropriate protecting groups.

Citation Download Citation

Yoshinori Matsui, Shu Seki, Shiro Matsui, Seiichi Tagawa, Shigeo Irie, and Toshiro Itani "Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534742

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