Synthesis of photoresists for 157-nm microlithography using CO2

Mary Kate Boggiano; Joseph M. DeSimone

doi:10.1117/12.535165

14 May 2004 Synthesis of photoresists for 157-nm microlithography using CO₂

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535165
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Norbornene-based monomers were synthesized to include fluorinated moieties and/or chemical amplification switching groups. Fluorinated homopolymers to be used as the basis of resist materials were synthesized from these monomers by addition polymerization using allylpalladium chloride dimmer. Monomers and polymers have been identified and partially characterized for important lithographic properties. A monomer containing a silsesquioxane group has been incorporated into this platform to enhance etch resistance. A monomer containing an acid-cleavable group has also been synthesized and will be incorporated into this platform.

Citation Download Citation

Mary Kate Boggiano and Joseph M. DeSimone "Synthesis of photoresists for 157-nm microlithography using CO₂", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535165

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