Paper
28 May 2004 A self-consistent modeling of the leakage current through thin oxides
A. S. Arkhipov, E. A. Burovski, I. Ya. Polishchuk
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562733
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
A simple computationally effective semi-analytical macroscopic technique of self-consistent calculations of the electrical properties of the MOS structures with ultra thin high-k gate oxide film is developed. Calculated gate voltage - gate leakage [substrate-injected direct and Fowler-Nordheim (FN) tunneling] and gate capacitance characteristics are presented and discussed. The Si/oxide band offset is shown to be the main parameter affecting leakage. The stepwise behaviour of the I - V characteristics is predicted. A contribution of the FN injection is discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. S. Arkhipov, E. A. Burovski, and I. Ya. Polishchuk "A self-consistent modeling of the leakage current through thin oxides", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562733
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KEYWORDS
Oxides

Electrons

Molybdenum

Dielectrics

Interfaces

Field effect transistors

Capacitance

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