Features of electroforming in open sandwich-structures Si-SiO2-W for silicon of different types of conductivity

Victor M. Mordvintsev; Sergey E. Kudrjavtsev; Valeriy L. Levin

doi:10.1117/12.557444

28 May 2004 Features of electroforming in open sandwich-structures Si-SiO₂-W for silicon of different types of conductivity

Victor M. Mordvintsev, Sergey E. Kudrjavtsev, Valeriy L. Levin

Author Affiliations +

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557444
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

The results of experiments on research of electroforming processes in open “sandwich”-structures Si-SiO₂-W (silicon - silicon dioxide - tungsten) with thickness of silicon dioxide about 20 nm are shown. The basic distinction for silicon of p- and n-types conductivity is marked: in the first case usual for electroforming N-type current-voltage characteristic and in the second S-type curve typical for electric breakdown with thermal instability are observed. The mechanisms of processes are discussed. The marked distinction is connected with the fact that in structures n-Si-SiO₂-W the current is transported basically by electrons which dissociative attachment to molecules on a surface of an insulating slit leads to their destruction and conductive phase particles formation from them. In a current through structures p-Si-SiO₂-W the electrons prevail only at initial moments of electroforming, in process of conductive medium accumulation their share falls by one - two orders, and the current is transported by holes, which cannot participate during formation of conductive phase particles.

Citation Download Citation

Victor M. Mordvintsev, Sergey E. Kudrjavtsev, and Valeriy L. Levin "Features of electroforming in open sandwich-structures Si-SiO₂-W for silicon of different types of conductivity", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557444

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