Low-thermal expansion material for EUVL photomask substrate application

Kousuke Nakajima; Nobuo Kawasaki; Toshihide Nakajima

doi:10.1117/12.557815

20 August 2004 Low-thermal expansion material for EUVL photomask substrate application

Kousuke Nakajima, Nobuo Kawasaki, Toshihide Nakajima

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557815
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

The Coefficient of Thermal Expansion (CTE) uniformity and the surface finish performance of the low expansion glass-ceramic material produced by Ohara called CLEARCERAM-Z HS were investigated relative to the SEMI P37 specifications for Extreme Ultraviolet Lithography (EUVL) Photomask Substrates. The study on the CTE uniformity utilizing precision CTE measurement system based on Fizeau Interferometry with a single ppb/degree C level repeatability revealed that the standard deviation of the latest product CTE (+19 to +25degree C) data was 0±10ppb/degree C, which meets the Class B CTE specification in the SEMI P37 with statistical confidence and was improved from the previous report (0±15ppb/degree C, Class C). For the surface finish performance, the flatness data less than 100 nm (meeting Class A in the SEMI P37) and the roughness of 0.15nm Rms (Conforming to the SEMI P37) were demonstrated. Additionally the roughness uniformity was investigated and shown to be 1% in the coefficient of variation. By reviewing the data and performances from actual measurements, the suitability of CLEARCERAM-Z HS for EUVL Photomask Substrate material is discussed and updated. Also, preliminary R&D data of a new CLEARCERAM-Z material now under developing to response to the further requirements from EUVL community are introduced.

Citation Download Citation

Kousuke Nakajima, Nobuo Kawasaki, and Toshihide Nakajima "Low-thermal expansion material for EUVL photomask substrate application", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557815

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