Cavity solitons in broad area VCSELs below threshold

Xavier Hachair; Stephane Barland; Luca Furfaro; Massimo Giudici; Salvador Balle; Jorge R. Tredicce; Massimo Brambilla; Tommaso Maggipinto; Ida M. Perrini; Giovanna Tissoni; Luigi Lugiato

doi:10.1117/12.544278

1 September 2004 Cavity solitons in broad area VCSELs below threshold

Xavier Hachair, Stephane Barland, Luca Furfaro, Massimo Giudici, Salvador Balle, Jorge R. Tredicce, Massimo Brambilla, Tommaso Maggipinto, Ida M. Perrini, Giovanna Tissoni, Luigi Lugiato

Author Affiliations +

Proceedings Volume 5452, Semiconductor Lasers and Laser Dynamics; (2004) https://doi.org/10.1117/12.544278
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

Cavity solitons are stationary self-organized bright intensity peaks which form over a homogeneous background in the section of broad area radiation beams. They are generated by shining a writing/erasing laser pulse into a nonlinear optical cavity, driven by a holding beam. The ability to control their location and their motion by introducing phase or amplitude gradients in the holding beam makes them interesting as mobile pixels for all-optical processing units. We show the generation of a number of cavity solitons in broad area vertical cavity semiconductor microresonators electrically pumped above transparency but slightly below threshold. The observed spots can be written, erased and manipulated as independent objects. We analyze experimentally the cavity solitons domain of existence in the parameter space and how their characteristics are affected by inhomogeneities and impurities of the vertical cavity devices. A theoretical model, keeping into account the devices characteristics, reproduces numerically the experimental observations with good agreement.

Citation Download Citation

Xavier Hachair, Stephane Barland, Luca Furfaro, Massimo Giudici, Salvador Balle, Jorge R. Tredicce, Massimo Brambilla, Tommaso Maggipinto, Ida M. Perrini, Giovanna Tissoni, and Luigi Lugiato "Cavity solitons in broad area VCSELs below threshold", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); https://doi.org/10.1117/12.544278

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