Paper
16 August 2004 Modeling of microstrip lines on micromachined silicon substrates
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Abstract
In this paper, two matched microstrip line configurations for the excitation of magnetostatic wave resonators have been studied for optimizing the performances of a Magnetostatic Wave (MSW) Straight Edge Resonator (SER). The first transducer was designed for a band-stop and the second one for a band-pass resonator, both suspended on a silicon micromachined membrane obtained by means of wet anisotropic etching. It has been previously observed that the insertion losses of microstrip lines on silicon membrane for band-stop and band-pass MSW SERs are improved with respect to the same microstrip line structures realized on a silicon bulk substrate. For that reason the modelling of the microstrip lines has been optimized in view of their application in SER devices. The Microwave Office program, a powerful tool for the design of microwave planar devices, has been used. The theoretical S-parameters have been obtained and optimized by changing the geometry in the design of the transmission lines.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alina N. Cismaru, Romolo Marcelli, George Sajin, and Florea Craciunoiu "Modeling of microstrip lines on micromachined silicon substrates", Proc. SPIE 5455, MEMS, MOEMS, and Micromachining, (16 August 2004); https://doi.org/10.1117/12.545541
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KEYWORDS
Silicon

Resonators

Microwave radiation

Transducers

Semiconducting wafers

Modeling

Aluminum

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