Paper
9 June 2004 Surface-acoustic-wave-controlled photodetectors
Fernando Calle, T. Palacios, J. Pedros, J. Grajal
Author Affiliations +
Proceedings Volume 5502, Second European Workshop on Optical Fibre Sensors; (2004) https://doi.org/10.1117/12.566698
Event: Second European Workshop on Optical Fibre Sensors, 2004, Santander, Spain
Abstract
Nitride semiconductor devices have recently been developed for a number of electronic and optoelectronic applications, including amplifiers, light emitters and several kinds of sensors. In particular, ultraviolet detectors with a tailored spectral response can be achieved due to the direct wide bandgap of AlGaN alloys; on the other side, acoustic wave devices take advantage of the piezoelectric and elastic properties. In this work, we will describe the fabrication and characterization of a novel kind of optical detector, based on the interaction of surface acoustic waves and photocarriers. The response, which is linear with the incident optical power, can be controlled either by modifying the input power of the RF signal which creates the acoustic wave, or by tuning its frequency, in the latter case with a very high sensitivity. Several applications can be envisaged as a result of this synergy, such as imaging displays and electro-optical modulators.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fernando Calle, T. Palacios, J. Pedros, and J. Grajal "Surface-acoustic-wave-controlled photodetectors", Proc. SPIE 5502, Second European Workshop on Optical Fibre Sensors, (9 June 2004); https://doi.org/10.1117/12.566698
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KEYWORDS
Acoustics

Sensors

Photodetectors

Semiconductors

Electrodes

Gallium nitride

Ultraviolet radiation

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