Paper
31 January 2005 Limits of high-modulation bandwidth of VCSELs
Hong-Dong Zhao, Ping He, Mei Sun, Huai-Peng Wei, Yan Li, Tong Chen, Lian-Wei Liang, Tie-Gen Liu
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Abstract
The light intensity response and the transfer function of laser are given in small signal in order invest the upper modulation frequency of VCSELs. The cures of the relaxation oscillation frequency and -3dB bandwidth versus the differential gain coefficient and the spontaneous emission lifetime are presented. The results show that the high speed modulation characteristics can be achieved by increasing the differential gain. We also find out the modulation frequency of VCSELs is improved by decreasing carrier lifetime in the quantum well VCSELs. The spontaneous emission lifetime versus the cavity length is also presented due to the micro-cavity effect. The ultimate limit of direct modulation bandwidth in VCSELs is explored. A new scheme to increase the modulation bandwidth is proposed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong-Dong Zhao, Ping He, Mei Sun, Huai-Peng Wei, Yan Li, Tong Chen, Lian-Wei Liang, and Tie-Gen Liu "Limits of high-modulation bandwidth of VCSELs", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.569230
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KEYWORDS
Modulation

Vertical cavity surface emitting lasers

Quantum wells

Semiconductor lasers

Distributed Bragg reflectors

Laser damage threshold

Laser resonators

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