Paper
26 January 2005 Generation of steady and jitter-free sub-nanosecond electrical pulses with GaAs photoconductive switches
Wei Shi, Mengxia Li, Xuegang Xu, Ming Xu, Lei Hou, Huiying Dai
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Abstract
In this paper, experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nanosecond laser pulses were reported. The switches were insulated by solid multi-layer transparent dielectrics. Jitter-free electrical pulses with steady voltage amplitude from the 0.5 mm-gap GaAs switches were observed when biased with low voltage and triggered by serial laser pulses. Its change of amplitude was less than 1.2%, the triggered jitter-time was less than 10ps, and pulse width was up to sub-nanosecond. The effect of pulse energy change on the amplitude generated photoconductive semiconductor switch was analyzed. It was indicated that ultra-fast electrical pulse with steady voltage amplitude and pico-second triggered jitter-time can be obtained by controlling switch trigger condition and optimizing switch design.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Shi, Mengxia Li, Xuegang Xu, Ming Xu, Lei Hou, and Huiying Dai "Generation of steady and jitter-free sub-nanosecond electrical pulses with GaAs photoconductive switches", Proc. SPIE 5627, High-Power Lasers and Applications III, (26 January 2005); https://doi.org/10.1117/12.577818
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Cited by 1 scholarly publication.
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KEYWORDS
Pulsed laser operation

Gallium arsenide

Switches

Laser energy

Electrodes

Ultrafast phenomena

Dielectrics

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