Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Tsann-Bim Chiou; Alek C. Chen; Stephen D. Hsu; Mark Eurlings; Eric Hendrickx

doi:10.1117/12.575989

27 January 2005 Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Tsann-Bim Chiou, Alek C. Chen, Stephen D. Hsu, Mark Eurlings, Eric Hendrickx

Author Affiliations +

Proceedings Volume 5645, Advanced Microlithography Technologies; (2005) https://doi.org/10.1117/12.575989
Event: Photonics Asia, 2004, Beijing, China

Abstract

To extend the application of current optical lithographic tools to next generation production technology, it is necessary to reduce the k1 factor in Rayleigh's resolution equation. Double dipole lithography (DDL) is one of the candidates for a low-k1 imaging technique and it is a viable solution for 65- and 45-nm technology nodes. Because DDL takes has the advantage of extreme off-axis illumination of the dipole, the printing capability of small features as well as their through-pitch common process window can be enhanced. However, as a dipole illuminator gains the benefits of high contrast only for structures perpendicular to the dipole orientation, the original mask layout must be converted into horizontal and vertical components and printed in a double exposure. Throughput will be sacrificed due to the multiple exposures. Nevertheless, DDL mask manufacture is relatively simple compared to the production of the more complicated phase shift mask (PSM) and chromeless phase lithography (CPL). As regards an overlay issued from the separate image composition, several papers have shown the minor effect on pattern fidelity using the current ArF scanner. To split the design layout according to the pattern orientation, the double exposure scheme needs an automatic layout conversion algorithm. To integrate the H V conversion with model- and/or rule-based optical proximity corrections (OPCs), several approaches for pattern decomposition associated with OPC treatment have been suggested. In this paper we will go over the development of model- and rule-based OPC treatment and will focus on current technology for accurate model-based OPC development with empirical model calibration. Using the technique the lithographic performances such as pattern fidelity, process window as well as overlay error sensitivity will be demonstrated. We focus on a 65-nm technology node with k1 near 0.31. Based on the success of tool development and verification, the DDL with full-chip OPC-treated decomposition will become a mature low-k1 imaging solution.

Citation Download Citation

Tsann-Bim Chiou, Alek C. Chen, Stephen D. Hsu, Mark Eurlings, and Eric Hendrickx "Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.575989

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