Synchrotron radiation stimulated etching SiO2 thin films with a contact micropattern mask

Changshun Wang; Tsuneo Urisu

doi:10.1117/12.569672

27 January 2005 Synchrotron radiation stimulated etching SiO₂ thin films with a contact micropattern mask

Changshun Wang, Tsuneo Urisu

Proceedings Volume 5645, Advanced Microlithography Technologies; (2005) https://doi.org/10.1117/12.569672
Event: Photonics Asia, 2004, Beijing, China

Abstract

In this paper, patterning SiO₂ thin film on the Si (100) surface was successfully demonstrated using a synchrotron radiation (SR) stimulated etching technique with SF₆ + O₂ as the reaction gas and a Co contact mask. The contact Co contact mask on the SiO₂ surface was fabricated by sputtering Co film on a photolithography resist pattern and lift-off technique. The thickness of the Co mask measured using a step profile meter was about 145 nm. The SR irradiation with flowing SF₆ and O₂ can effectively etch the silicon dioxide and the etching process stop at the silicon surface. The etching rate was found to increase with decreasing the substrate temperature. The Co mask was found to show sufficient resistivity for the SR etching. The etched pattern was evaluated by scanning electron microscopy (SEM) and step profile meter.

Citation Download Citation

Changshun Wang and Tsuneo Urisu "Synchrotron radiation stimulated etching SiO₂ thin films with a contact micropattern mask", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.569672

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