Lifetime characterization of capacitive RF MEMS switches

Afshin Ziaei; Thierry Dean; Jean-Philippe Polizzi

doi:10.1117/12.590132

22 January 2005 Lifetime characterization of capacitive RF MEMS switches

Afshin Ziaei, Thierry Dean, Jean-Philippe Polizzi

Proceedings Volume 5716, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS IV; (2005) https://doi.org/10.1117/12.590132
Event: MOEMS-MEMS Micro and Nanofabrication, 2005, San Jose, California, United States

Abstract

RF MEMS switches provide a low-cost, high performance solution to many RF/microwave applications and these switches will be important building blocks for designing phase shifters, switched filters and reflector array antennas for military and commercial markets. In this paper, progress in characterizing of THALES capacitive MEMS devices under high RF power is presented. The design, fabrication and testing of capacitive RF MEMS switches for microwave/mm- wave applications on high-resistivity silicon substrate is presented. The switches tested demonstrated power handling capabilities of 1W (30 dbm) for continuous RF power. The reliability of these switches was tested at various power levels indicating that under continuous RF power. In addition a description of the power failures and their associated operating conditions is presented. The PC-based test stations to cycle switches and measure lifetime under DC and RF loads have been developed. Best-case lifetimes of 10¹⁰ cycles have been achieved in several switches from different lots under 30 dbm RF power.

Citation Download Citation

Afshin Ziaei, Thierry Dean, and Jean-Philippe Polizzi "Lifetime characterization of capacitive RF MEMS switches", Proc. SPIE 5716, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS IV, (22 January 2005); https://doi.org/10.1117/12.590132

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