A two-dimensional drift-diffusion model of THz emission from n-GaAs and InAs surfaces in a magnetic field

Kenneth J. Chau; Abdul Y. Elezzabi

doi:10.1117/12.590643

13 April 2005 A two-dimensional drift-diffusion model of THz emission from n-GaAs and InAs surfaces in a magnetic field (Invited Paper)

Kenneth J. Chau, Abdul Y. Elezzabi

Author Affiliations +

Proceedings Volume 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX; (2005) https://doi.org/10.1117/12.590643
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We present a model of THz emission enhancement from femtosecond pulse excited n-GaAs and InAs surfaces with the application of a dc magnetic field. The far-field THz emission at different optical excitation densities, magnetic field strengths, and magnetic field orientations is determined. The model accurately describes the power dependence of THz emission from n-GaAs and InAs surfaces for magnetic field strengths up to ±10 T and ±6 T, respectively. THz emission saturation in both semiconductors for optical excitation densities from 40 nJ/cm² to 2.2 μJ/cm² are in accordance with previously reported experimental data. The model provides a useful tool for the description of ultra-fast processes in semiconductors.

Citation Download Citation

Kenneth J. Chau and Abdul Y. Elezzabi "A two-dimensional drift-diffusion model of THz emission from n-GaAs and InAs surfaces in a magnetic field (Invited Paper)", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.590643

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