High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

Wei Zhang; Ho-Chul Lim; Maho Taguchi; Stanley Tsao; John Szafraniec; Bijan Movaghar; Manijeh Razeghi; Meimei Tidrow

doi:10.1117/12.597139

25 March 2005 High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

Wei Zhang, Ho-Chul Lim, Maho Taguchi, Stanley Tsao, John Szafraniec, Bijan Movaghar, Manijeh Razeghi, Meimei Tidrow

Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.597139
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared detection. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs including higher operation temperature and normal incidence detection. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD). The device structures consist of multiple stacks of InAs quantum dots with InP barriers. High detectivities in the range of 10¹⁰cmHz^1/2/W were obtained at 77K. The measurements at higher temperatures show better temperature dependent performance than QWIP. However, the performances of QDIPs are still far from the expected. One of the reasons is the low quantum efficiency due to the low fill factor of quantum dots layer. Resonant cavity enhanced QDIP has been studied to increase the quantum efficiency. Different schemes of mirrors using free carrier plasma and distributed Bragg reflector are discussed.

Citation Download Citation

Wei Zhang, Ho-Chul Lim, Maho Taguchi, Stanley Tsao, John Szafraniec, Bijan Movaghar, Manijeh Razeghi, and Meimei Tidrow "High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.597139

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