Linear optical response of Si1-xGex compounds

A. Ferriera da Silva; N. Souza Dantas; R. Ahuja; I. Pepe; Eronides Felisberto da Silva Jr.; O. Nur; M. Willander; C. Persson

doi:10.1117/12.591261

25 March 2005 Linear optical response of Si_1-xGe_x compounds

A. Ferriera da Silva, N. Souza Dantas, R. Ahuja, I. Pepe, Eronides Felisberto da Silva Jr., O. Nur, M. Willander, C. Persson

Author Affiliations +

Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.591261
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Si_1-xGe_x is a good candidate as a substitute material for Si in a low-power and high-speed semiconductor device technologies. Optical devices, such as heterojunction bipolar transistors, are already in industrial production. The samples are grown on Si(001) with both n- and p-type impurities and with different Ge concentrations. The linear optical response of Si_1-xGe_x is investigated theoretically using a full-potential linearized augmented plane wave method with respect to composition x. The calculated real and imaginary parts of the dielectric function ε(ω) = ε₁(ω) + iε₂(ω) were found to be in good agreement with recent spectroscopic ellipsometry measurements performed by Bahng et al., J. Phys.: Condens. Matter 13, 777 (2001). We also perform absorption measurements for different type of samples showing the variation of energy gaps as a function of Ge concentrations.

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A. Ferriera da Silva, N. Souza Dantas, R. Ahuja, I. Pepe, Eronides Felisberto da Silva Jr., O. Nur, M. Willander, and C. Persson "Linear optical response of Si_1-xGe_x compounds", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.591261

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