Growth and acoustical properties of B-BaB2O4 crystals

V. V. Atuchin; V. G. Remesnik; E. G. Tsvetkov; I. I. Zubrinov

doi:10.1117/12.634475

8 June 2005 Growth and acoustical properties of B-BaB₂O₄ crystals

V. V. Atuchin, V. G. Remesnik, E. G. Tsvetkov, I. I. Zubrinov

Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.634475
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation

Abstract

β-BaB₂O₄ (BBO) crystals are among the most effective nonlinear optical materials used for frequency conversion. At the same time, some important physical properties of BBO are less studied and its potential applications are not clear yet. In this work we studied the optical and acoustical properties of crystals produced by improved top-seeded solution growth (TSSG) method. Using particular chemicals for molten solution synthesis and periodical adding ofproper compounds into the melt allowed us to control the degree of boron-oxygen polycondensation in the zone of seeding and crystal growth. Hence, growing BBO single crystals contained little or no melt inclusions and low-angle structural boundaries. Optimization of cooling conditions of grown crystals eliminated microscale light-scattering centers. Transmission spectra in mid-IR range show the system of absorption lines related to the presence of OH-groups in crystal lattice. Sound velocity measurements have been conducted using interference acousto-optic technique for longitudinal crystallographic directions. It has been shown that the crystals are characterized by higher stiffness tensor components compared with those reported for BBO grown by traditional TSSG method. The effect appears to be the result of BBO structural quality owing to the progress in crystal growth.

Citation Download Citation

V. V. Atuchin, V. G. Remesnik, E. G. Tsvetkov, and I. I. Zubrinov "Growth and acoustical properties of B-BaB₂O₄ crystals", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634475

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