A comparative analysis of Si wafer surface structure based on AFM and scattered light measurement techniques

D. Litwin; B. Surma; B. Piatkowski; A. Miros; J. Galas

doi:10.1117/12.622464

8 October 2005 A comparative analysis of Si wafer surface structure based on AFM and scattered light measurement techniques

D. Litwin, B. Surma, B. Piatkowski, A. Miros, J. Galas

Author Affiliations +

Proceedings Volume 5948, Photonics Applications in Industry and Research IV; 59481L (2005) https://doi.org/10.1117/12.622464
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

A scanning helium atom microscope, is a very promising tool in surface science. In this technique a focused beam of low energy, neutral helium atoms is used as an imaging probe. The method is suitable to be applied to surface investigation in science and industry. The He-beam is created by supersonic expansion from a high pressure reservoir through a nozzle. It is focused onto the sample by a mirror created from an electrostatically deformed single silicon wafer. The shape of the mirror is obtained by an electrode system controlled by a computer. The focusing mirror consists of a chemically-prepared silicon wafer placed between two aluminium discs and suspended above an electrode structure. The surface quality of the mirror is the most crucial because it limits resolution of the helium microscope. Therefore it is planned to make various improvements to the mirror at both the macroscopic and atomic levels. The centre of gravity of the paper is in measurements of the surface quality of the wafer using scattered light based technique and AFM, so that the technological process of the wafers could be modified to obtain improved surface. The roughness was studied for the (111) oriented mechanically-chemically polished surfaces of silicon wafers with different miscut. The wafers with miscut of 0°, ± 0.25^o and ± 0.5^o toward (11bar2) direction were used for experiments. The miscut was determined with the accuracy of ±1'.

Citation Download Citation

D. Litwin, B. Surma, B. Piatkowski, A. Miros, and J. Galas "A comparative analysis of Si wafer surface structure based on AFM and scattered light measurement techniques", Proc. SPIE 5948, Photonics Applications in Industry and Research IV, 59481L (8 October 2005); https://doi.org/10.1117/12.622464

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconducting wafers

Zoom lenses

Data centers

Silicon

Mirrors

Amplifiers

Surface finishing

Show All Keywords

Keywords/Phrases

Search In:

Publication Years