Nonequilibrium theory for semiconductor laser systems

A. Thränhardt; S. Becker; C. Schlichenmaier; I. Kuznetsova; S. W. Koch; J. Hader; J. V. Moloney; W. W. Chow

doi:10.1117/12.661349

28 February 2006 Nonequilibrium theory for semiconductor laser systems

A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader, J. V. Moloney, W. W. Chow

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 61150W (2006) https://doi.org/10.1117/12.661349
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing effcient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution. The gain spectrum, however, does not show spectrally narrow hole burning but a reduction over a wide range of frequencies compared to the equilibrium gain because of the large homogeneous broadening in the high density lasing system.

Citation Download Citation

A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow "Nonequilibrium theory for semiconductor laser systems", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61150W (28 February 2006); https://doi.org/10.1117/12.661349

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