Beyond the ABC: carrier recombination in semiconductor lasers

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1117/12.641744

28 February 2006 Beyond the ABC: carrier recombination in semiconductor lasers

J. Hader, J. V. Moloney, S. W. Koch

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 61151T (2006) https://doi.org/10.1117/12.641744
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

It is demonstrated that fully microscopic many-body models are required for a correct description of the dominant carrier loss processes in semiconductor lasers, spontaneous emission and Auger recombination, and that they are able to quantitatively predict these losses. The density dependence of the losses assumed in semi-empirical approaches, J=AN+BN²+CN³, is shown to break down already near transparency. For the spontaneous emission it is shown to decrease from quadratic to linear (BN), Auger rates are shown to increase only quadratically (CN²) or even less.

Citation Download Citation

J. Hader, J. V. Moloney, and S. W. Koch "Beyond the ABC: carrier recombination in semiconductor lasers", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151T (28 February 2006); https://doi.org/10.1117/12.641744

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