Light emission from an ambipolar semiconducting polymer field-effect transistor

James S. Swensen; Cesare Soci; Alan J. Heeger

doi:10.1117/12.644204

23 February 2006 Light emission from an ambipolar semiconducting polymer field-effect transistor

James S. Swensen, Cesare Soci, Alan J. Heeger

Proceedings Volume 6117, Organic Photonic Materials and Devices VIII; 61170R (2006) https://doi.org/10.1117/12.644204
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Ambipolar light-emitting field-effect transistors are fabricated with two different metals for the top-contact source and drain electrodes; a low-work-function metal defining the channel for the source electrode and a high-work-function metal defining the channel for the drain electrode. A thin film of polypropylene-co-1-butene on SiN_x is used as the gate dielectric on an n⁺⁺-Si wafer, which functioned as the substrate and the gate electrode. Transport data show ambipolar behavior. Recombination of electrons and holes results in a narrow zone of light emission within the channel. The location of the emission zone is controlled by the gate bias.

Citation Download Citation

James S. Swensen, Cesare Soci, and Alan J. Heeger "Light emission from an ambipolar semiconducting polymer field-effect transistor", Proc. SPIE 6117, Organic Photonic Materials and Devices VIII, 61170R (23 February 2006); https://doi.org/10.1117/12.644204

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