Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN

K. T. Tsen; C. Poweleit; D. K. Ferry; Hai Lu; William J. Schaff

doi:10.1117/12.651190

15 February 2006 Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN

K. T. Tsen, C. Poweleit, D. K. Ferry, Hai Lu, William J. Schaff

Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 61180D (2006) https://doi.org/10.1117/12.651190
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Transient Raman spectroscopy has been used to study electron transport in a thick InN film grown on GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity in the Γ valley, which reaches as high as 7.5x10⁷ cm/sec, can exceed its steady state value by as much as 40%. Electron velocities have been found to cut off at around 2x10⁸ cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. Our experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.

Citation Download Citation

K. T. Tsen, C. Poweleit, D. K. Ferry, Hai Lu, and William J. Schaff "Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180D (15 February 2006); https://doi.org/10.1117/12.651190

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