Time-resolved photoluminescence studies of Mg-doped AlN epilayers

N. Nepal; M. L. Nakarmi; J. Y. Lin; H. X. Jiang

doi:10.1117/12.651856

15 February 2006 Time-resolved photoluminescence studies of Mg-doped AlN epilayers

N. Nepal, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 61180E (2006) https://doi.org/10.1117/12.651856
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Mg-doped AlN epilayers grown by metalorganic chemical vapor deposition have been studied by deep UV time-resolved photoluminescence (PL) spectroscopy. A PL emission line at 6.02 eV has been observed at 10 K in Mgdoped AlN, which is about 40 meV below the free-exciton (FX) transition in undoped AlN epilayer. Temperature dependent measurement of the PL intensity of this emission line also reveals a binding energy of 40 meV. This transition line is believed to be due to the recombination of an exciton bound to neutral Mg acceptor (I₁) with a binding energy, E_bx of 40 meV. The recombination lifetime of the I₁ transition in Mg doped AlN have been measured to be 130 ps, which is close to the expected value. Excitation intensity dependence of time-resolved PL for Mg-doped AlN epilayer is also measured to understand carrier and exciton dynamics.

Citation Download Citation

N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang "Time-resolved photoluminescence studies of Mg-doped AlN epilayers", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180E (15 February 2006); https://doi.org/10.1117/12.651856

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