Direct observation of the electron spin relaxation induced by nuclei in quantum dots

P.-F. Braun; L. Lombez; X. Marie; B. Urbaszek; T. Amand; P. Renucci; D. Lagarde; V. K. Kalevich; K. V. Kavokin; O. Krebs; P. Voisin

doi:10.1117/12.641399

15 February 2006 Direct observation of the electron spin relaxation induced by nuclei in quantum dots

P.-F. Braun, L. Lombez, X. Marie, B. Urbaszek, T. Amand, P. Renucci, D. Lagarde, V. K. Kalevich, K. V. Kavokin, O. Krebs, P. Voisin

Author Affiliations +

Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 61180Q (2006) https://doi.org/10.1117/12.641399
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of T_Δ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field in the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, "written" with a first pulse, remains stable long enough to be "read" 15ns later with a second pulse.

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P.-F. Braun, L. Lombez, X. Marie, B. Urbaszek, T. Amand, P. Renucci, D. Lagarde, V. K. Kalevich, K. V. Kavokin, O. Krebs, and P. Voisin "Direct observation of the electron spin relaxation induced by nuclei in quantum dots", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180Q (15 February 2006); https://doi.org/10.1117/12.641399

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