Direction dependent homoepitaxial growth and bandgap of GaN nanowires

Mahendra K. Sunkara; Hongwei Li; Alan H. Chin

doi:10.1117/12.658050

3 March 2006 Direction dependent homoepitaxial growth and bandgap of GaN nanowires

Mahendra K. Sunkara, Hongwei Li, Alan H. Chin

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210I (2006) https://doi.org/10.1117/12.658050
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Here, we report a direct synthesis approach for obtaining GaN nanowires with control on growth directions: <0001> or c-direction, and <10-10> or a-direction, on amorphous substrates. The direct nitridation of Ga droplets using either dissociated ammonia or N₂/H₂ plasma resulted in GaN nanowires with <0001> growth direction; and the vapor transport of controlled (low) amounts of Ga flux in the presence of dissociated ammonia resulted in GaN nanowires with <10-10> growth direction. In both cases, the resulting GaN nanowires have diameters as small as 20 nm and lengths exceeding one hundred microns. Photoluminescence measurements showed that the bandgap of <10-10> wires blue-shifted by 50 meV from the wires with <0001> direction. Homo-epitaxial growth studies onto the pre-synthesized a-direction GaN nanowires led to belt or ribbon shaped morphologies. Homo-epitaxial growth onto c-direction wires developed micro hexagonal prism morphologies. The island growth morphologies observed on the hundred micron long, sub 30 nm size nanowires suggest that the surface transport of adatoms on c-direction wires exhibit ballistic transport or "one-dimensional" transport with mean distances over several tens of microns.

Citation Download Citation

Mahendra K. Sunkara, Hongwei Li, and Alan H. Chin "Direction dependent homoepitaxial growth and bandgap of GaN nanowires", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210I (3 March 2006); https://doi.org/10.1117/12.658050

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