Paper
11 April 2006 193 nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate
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Abstract
A high performance 193 nm resist has been developed from a novel hybrid copolymer based on a cycloolefin-maleic anhydride and methacrylate (COMA/Methacrylate) polymer system. A variety of copolymers have been synthesized from t-butyl norbornene carboxylate (BNC), t-butyl tetracyclo[4.4.0.1. 2,617,10] dodec-8-ene-3-carboxylate (TCDBC), t-butoxycarbonylmethyl tetracyclo[4.4.0.1.2,617,10]dodec-8-ene-3-carboxylate (BTCDC), and 5-[2-trifluoromethyl-1,1,1-trifluoro-2-hydroxypropyl]-2-norbornene (F1) and maleic anhydride (MA). The effect of the monomers and the ratio of monomers in the copolymer on lithographic performance studied. This paper will report the chemistry of the polymer platform and relative advantages and disadvantages of having certain monomers in terms of lithographic performance and line edge roughness, and post exposure bake sensitivity.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Dalil Rahman, Srivanisan Chakrapani, Clement Anyadiegwu, Guanyang Lin, Allen Timko, Frank Houlihan, David Rentkiewicz, Takanori Kudo, Douglas McKenzie, Ralph Dammel, and Munirathna Padmanaban "193 nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615327 (11 April 2006); https://doi.org/10.1117/12.658671
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KEYWORDS
Polymers

Lithography

Line edge roughness

Semiconducting wafers

Critical dimension metrology

Photoresist processing

Polymer thin films

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