Chemically amplified thick film i-line positive resist for electroplating and redistribution applications

Medhat Toukhy; Salem Mullen; Margareta Paunescu; Chunwei Chen; Stephen Meyer; Georg Pawlowski; Yoshio Murakami; Clifford Hamel

doi:10.1117/12.656595

29 March 2006 Chemically amplified thick film i-line positive resist for electroplating and redistribution applications

Medhat Toukhy, Salem Mullen, Margareta Paunescu, Chunwei Chen, Stephen Meyer, Georg Pawlowski, Yoshio Murakami, Clifford Hamel

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61534H (2006) https://doi.org/10.1117/12.656595
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Adapting chemically amplified (CA) resist technology to thick film applications is demonstrated in this paper over a wide range of thicknesses and types of substrates. Substantial performance differences were observed over copper (Cu) substrates compared to silicon (Si). These differences are attributed to different photo acid generator (PAG) distribution in the resist depth influenced by its structure and the nature of the substrate. Optimized resist formulations were developed to provide acceptable performance on Cu wafers. A family of new chemically amplified thick film resist products is being introduced to the market. This technology offers significant advantages in throughput and performance over conventional novolak / diazonaphthoquinone (DNQ) products at a competitive cost.

Citation Download Citation

Medhat Toukhy, Salem Mullen, Margareta Paunescu, Chunwei Chen, Stephen Meyer, Georg Pawlowski, Yoshio Murakami, and Clifford Hamel "Chemically amplified thick film i-line positive resist for electroplating and redistribution applications", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61534H (29 March 2006); https://doi.org/10.1117/12.656595

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