Diffusion and phase formation in ternary silicate systems framed by an ion bombardment

Sergey A. Krivelevich; Eduard Yu. Buchin; Yuri I. Denisenko; Roman V. Selyukov

doi:10.1117/12.677013

10 June 2006 Diffusion and phase formation in ternary silicate systems framed by an ion bombardment

Sergey A. Krivelevich, Eduard Yu. Buchin, Yuri I. Denisenko, Roman V. Selyukov

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626007 (2006) https://doi.org/10.1117/12.677013
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

New technology of obtaining of SOT-structures by ionic synthesis of buried silica glass layers has been proposed. This technology is based on physical processes of formation of a new phase that appears in ion-synthesized Si-B-O and Si-P-0 systems at heat treatment. It has been shown that synthesized layers can be formed at significantly moderated annealing conditions than in the case of SIMOX-process. The structures have been studied by secondary ion-mass spectrometry (SIMS), Auger-electron spectroscopy and X-ray photoelectron spectroscopy (XPS). The study of electrical characteristics of the structures with buried silica glass layers includes the current-voltage and capacity-voltage measurements.

Citation Download Citation

Sergey A. Krivelevich, Eduard Yu. Buchin, Yuri I. Denisenko, and Roman V. Selyukov "Diffusion and phase formation in ternary silicate systems framed by an ion bombardment", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626007 (10 June 2006); https://doi.org/10.1117/12.677013

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