Rearrangement of resonant-tunneling structure in the electric field revealed by complementary photoluminescence and vertical transport characterization of the GaAs/AlGaAs long-period superlattices

A. A. Belov; A. L. Karuzskii; Yu. A. Mityagin; V. N. Murzin; A. V. Perestoronin; A. A. Pishchulin; A. M. Tskhovrebov

doi:10.1117/12.683465

10 June 2006 Rearrangement of resonant-tunneling structure in the electric field revealed by complementary photoluminescence and vertical transport characterization of the GaAs/AlGaAs long-period superlattices

A. A. Belov, A. L. Karuzskii, Yu. A. Mityagin, V. N. Murzin, A. V. Perestoronin, A. A. Pishchulin, A. M. Tskhovrebov

Author Affiliations +

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626019 (2006) https://doi.org/10.1117/12.683465
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

Multi quantum-well long-period structures are promising for a number of important applications including the far infrared intersubband-transition-based narrow-band radiation devices, microwave resonant-tunneling and self-sustained current oscillation generators, multilevel-logic element devices based on the recently found switching effect between the multistable current states, terahertz emission detectors. All devices have in common the operation dependence on resonant-tunneling rearrangement effects in the long-period structure. We present the results of optical investigation of resonant-tunneling rearrangement processes in long-period GaAs/AlGaAs superlattice structures under application of vertical electric field by means of low-temperature photoluminescence (PL) technique in comparisons with the data of vertical transport measurements performed simultaneously on the same structures. The effect of appearance of the new PL peaks accompanied by suppression of the old ones with increasing bias voltage has been detected, resulting from the Stark shift phenomenon. PL intensity dependences on the applied voltage are presented for the first time which complement the measured current-voltage data. The transition effect from bound (exciton) to free (electron and hole) states in electric field is observed. It is shown that the optical research method can be more sensitive in some situations to provide the crucial information about the resonant-tunneling rearrangement effects even under condition when the ordinary current-voltage measurements do not reveal any features.

Citation Download Citation

A. A. Belov, A. L. Karuzskii, Yu. A. Mityagin, V. N. Murzin, A. V. Perestoronin, A. A. Pishchulin, and A. M. Tskhovrebov "Rearrangement of resonant-tunneling structure in the electric field revealed by complementary photoluminescence and vertical transport characterization of the GaAs/AlGaAs long-period superlattices", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626019 (10 June 2006); https://doi.org/10.1117/12.683465

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Superlattices

Excitons

Quantum wells

Luminescence

Helium

Data modeling

Gallium arsenide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years