Paper
5 October 2006 1310-nm InGaAlAs short-cavity lasers for 10-Gbit/s low-power-consumption transceivers
Kazunori Shinoda, Takeshi Kitatani, Masahiro Aoki, Masaru Mukaikubo, Kenji Uchida, Kazuhisa Uomi
Author Affiliations +
Proceedings Volume 6352, Optoelectronic Materials and Devices; 63520B (2006) https://doi.org/10.1117/12.691031
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
An InGaAlAs short-cavity DBR laser enabling 1.3-μm, uncooled, 10-Gbit/s operation at lower drive currents is demonstrated. This laser consists of a short InGaAlAs-MQW active region butt-jointed to an InGaAsP-DBR region. This structure provides moderate chip power, low threshold current, and a large relaxation oscillation frequency simultaneously, because it has an optimum cavity length in the range between 10 and 100 μm, at which both VCSELs and conventional edge-emitters cannot be formed because of their difficulty of manufacture. The fabricated 75-μm short-cavity laser demonstrated 100°C, 10-Gb/s operation at a record low drive current of 14 mAp-p. Furthermore, it achieved side-mode suppression ratio of more than 37 dB at a high yield of 95%, because of the naturally high single-mode stability of its short-cavity DBR structure.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazunori Shinoda, Takeshi Kitatani, Masahiro Aoki, Masaru Mukaikubo, Kenji Uchida, and Kazuhisa Uomi "1310-nm InGaAlAs short-cavity lasers for 10-Gbit/s low-power-consumption transceivers", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520B (5 October 2006); https://doi.org/10.1117/12.691031
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KEYWORDS
Transceivers

Vertical cavity surface emitting lasers

Laser development

Interfaces

Modulation

Continuous wave operation

Laser stabilization

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