Paper
13 March 2007 Enhancing silicon cutting performance by shaping the focused beam
Author Affiliations +
Abstract
Singulation of devices from processed silicon wafers has historically been accomplished by cutting with mechanical saws. Current trends toward the use of thinner wafers coated with mechanically weak dielectrics reduce the speed and quality of mechanical cutting processes. The speed of laser cutting, which has previously been too low for practical implementation, may be increased significantly by altering the beam characteristics of a frequency-tripled Nd laser to produce an elliptical focused spot. Using a commercially available laser, the cutting speed exceeded that of mechanical cutting. The fracture strength of the edges as measured by bend testing is higher for elliptical beams than for round ones.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonard Migliore "Enhancing silicon cutting performance by shaping the focused beam", Proc. SPIE 6458, Photon Processing in Microelectronics and Photonics VI, 64580W (13 March 2007); https://doi.org/10.1117/12.708642
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Laser cutting

Semiconducting wafers

Silicon

Beam shaping

Diode pumped solid state lasers

Semiconductor lasers

Dielectrics

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