New results of InGaN LED simulation

O. I. Rabinovich; S. G. Nikiforov; V. P. Sushkov; A. V. Shishov

doi:10.1117/12.697272

22 March 2007 New results of InGaN LED simulation

O. I. Rabinovich, S. G. Nikiforov, V. P. Sushkov, A. V. Shishov

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 64680U (2007) https://doi.org/10.1117/12.697272
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Blue and green LEDs have been simulated. Changing LED performance characteristics, depending on In concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S₀ can be considered as a sum of "SmallLEDs (SLEDs)" electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Values of ratio S(X)/S₀ are described by Gauss distribution function in the range X = 0.15-0.25 for blue LEDs and X = 0.25-0.35 for green LEDs. Reasonable correspondence of simulation and experimental results (current-voltage characteristic (C-V Ch), Spectral Ch) can be observed.

Citation Download Citation

O. I. Rabinovich, S. G. Nikiforov, V. P. Sushkov, and A. V. Shishov "New results of InGaN LED simulation", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680U (22 March 2007); https://doi.org/10.1117/12.697272

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