Paper
6 February 2007 Pattern formation in multistacked-quantum-dot-based microcavities: modelization and role of gain asymmetries in the alpha factor
T. Maggipinto, M. Brambilla, I. M. Perrini, S. Barbay, R. Kuszelewicz
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Abstract
We develop a model that describes the optical response of a semiconductor quantum dot microcavity pumped above transparency but kept slightly below threshold. The model takes into account the inhomogeneous broadening of the dot emission, the coupling mechanisms between quantum dots and the wetting layer and incorporates gain asymmetry factors in the thermo-emission and capture coefficients. The role of asymmetries with respect to alpha factor and pattern formation is investigated. We then study the conditions for the onset of bistability and modulational instability and characterize the patterns formed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Maggipinto, M. Brambilla, I. M. Perrini, S. Barbay, and R. Kuszelewicz "Pattern formation in multistacked-quantum-dot-based microcavities: modelization and role of gain asymmetries in the alpha factor", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681B (6 February 2007); https://doi.org/10.1117/12.717185
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KEYWORDS
Transparency

Electrons

Optical microcavities

Solitons

Quantum dots

Semiconductors

Excitons

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