Simulation of p-n junction properties of nanowires and nanowire arrays

Jun Hu; Yang Liu; Alex Maslov; Cun-Zheng Ning; Robert Dutton; Sung-Mo Kang

doi:10.1117/12.701210

22 March 2007 Simulation of p-n junction properties of nanowires and nanowire arrays

Jun Hu, Yang Liu, Alex Maslov, Cun-Zheng Ning, Robert Dutton, Sung-Mo Kang

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 64681E (2007) https://doi.org/10.1117/12.701210
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photo-detectors and lasers. Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires and nanowire arrays. The implications of such effects in nanowire-based photo-detector design are also examined.

Citation Download Citation

Jun Hu, Yang Liu, Alex Maslov, Cun-Zheng Ning, Robert Dutton, and Sung-Mo Kang "Simulation of p-n junction properties of nanowires and nanowire arrays", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681E (22 March 2007); https://doi.org/10.1117/12.701210

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