Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering

Ya. I. Alivov; B. Xiao; Q. Fan; D. Johnstone; C. W. Litton; H. Morkoç

doi:10.1117/12.713217

20 February 2007 Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering

Ya. I. Alivov, B. Xiao, Q. Fan, D. Johnstone, C. W. Litton, H. Morkoç

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64740F (2007) https://doi.org/10.1117/12.713217
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The conduction band offset of n-ZnO/n-6H-SiC heterostructures prepared by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements led to conduction band offsets of 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

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Ya. I. Alivov, B. Xiao, Q. Fan, D. Johnstone, C. W. Litton, and H. Morkoç "Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740F (20 February 2007); https://doi.org/10.1117/12.713217

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