The characteristics of transparent metal-ZnO contacts and ZnO-based photodiodes

Y. Z. Chiou; T. K. Lin; C. Y. Lu; S. P. Chang; C. K. Wang; C. F. Kuo; H. M. Chang

doi:10.1117/12.717769

20 February 2007 The characteristics of transparent metal-ZnO contacts and ZnO-based photodiodes

Y. Z. Chiou, T. K. Lin, C. Y. Lu, S. P. Chang, C. K. Wang, C. F. Kuo, H. M. Chang

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64741A (2007) https://doi.org/10.1117/12.717769
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Low resistivity and high transparent ITO, RuO_x (1⩽x⩽2) and TiW ohmic contacts to ZnO film was achieved by RF sputter system and annealing treatment. The transmittance of 450°C-annealing ITO, 650°C-annealing Ru and 200°C-annealing TiW were measured to be 94, 68 and 61%, with wavelength of 400 nm, respectively. Moreover, the specific contact resistance of 450°C-annealing ITO, 650°C-annealing Ru and 200°C-annealing TiW on ZnO films was estimated to be 2.15x10^-4, 2.72x10^-4 and 2.56x10^-4 &OHgr;-cm² by circular transmission line model (CTLM) method, respectively. In the study of ZnO-based photodiodes, high quality and vertical well-aligned ZnO nanowires were selectively grown on ZnO:Ga/glass templates by vapor-liquid-solid method. Ultraviolet (UV) photodetectors using these vertical ZnO nanowires were also fabricated by spin-on-glass technology. With 2 V applied bias, it was found that dark current density of the fabricated device was only 3.8x10^-9 A/cm². It was also found that UV-to-visible rejection ratio and quantum efficiency of the fabricated ZnO nanowire photodetectors were more than 1000 and 12.6%, respectively.

Citation Download Citation

Y. Z. Chiou, T. K. Lin, C. Y. Lu, S. P. Chang, C. K. Wang, C. F. Kuo, and H. M. Chang "The characteristics of transparent metal-ZnO contacts and ZnO-based photodiodes", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741A (20 February 2007); https://doi.org/10.1117/12.717769

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