Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm

C. E. Dimas; C. T. Vishton; R. A. Merola; H. S. Djie; B. S. Ooi

doi:10.1117/12.700747

9 February 2007 Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm

C. E. Dimas, C. T. Vishton, R. A. Merola, H. S. Djie, B. S. Ooi

Proceedings Volume 6475, Integrated Optics: Devices, Materials, and Technologies XI; 64751B (2007) https://doi.org/10.1117/12.700747
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report the fabrication and characterization of broad emission linewidth GaAs/AlGaAs quantum-well based superluminescent diodes. A photon absorption section and an optical amplifier sections are monolithically integrated on the device to suppress feedback oscillation and to amplifier the optical power, respectively. The device emitters at 850 nm peak wavelength, and exhibits a broad bandwidth of 65 nm, output power > 3.5 mW, and a spectral ripple of 0.5 dB at 20^oC under continuous wave operation.

Citation Download Citation

C. E. Dimas, C. T. Vishton, R. A. Merola, H. S. Djie, and B. S. Ooi "Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm", Proc. SPIE 6475, Integrated Optics: Devices, Materials, and Technologies XI, 64751B (9 February 2007); https://doi.org/10.1117/12.700747

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