Exposure characteristics of character projection-type low-energy electron-beam direct writing system

Takayuki Satoh; Ryoichi Inanami; Katsumi Kishimoto; Keizo Hirose; Tetsuro Nakasugi; Takeshi Koshiba; Takumi Ota

doi:10.1117/12.711229

16 March 2007 Exposure characteristics of character projection-type low-energy electron-beam direct writing system

Takayuki Satoh, Ryoichi Inanami, Katsumi Kishimoto, Keizo Hirose, Tetsuro Nakasugi, Takeshi Koshiba, Takumi Ota

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65172G (2007) https://doi.org/10.1117/12.711229
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

We have developed a character projection (CP)-type low-energy electron beam (EB) direct writing (EBDW) system called EBIS (Electron Beam Integrated System). A low-energy EB of less than 5 keV has the potential to expose by the CP-method without intra- and inter-layer proximity effect corrections. In this paper, the advantages of the proximity effect of the low-energy EBDW system of 5 keV with the CP exposure are discussed. The experimental results to compare the intra-layer proximity effect between 5 keV and 50 keV showed that the low-energy EB has an advantage over high-energy EB in terms of small shot size deviation at the pattern edge. The experimental results of inter-layer proximity effect of 5 keV indicate that no proximity effect corrections for structures in underlying layers are necessary in the case of the combination of low-energy EB and multi-layer resist. On the other hand, in response to concern about the Coulomb interaction effect, which is a critical problem of low-energy EB, a dose correction function of each shot was proposed for the EBIS system. We are convinced that the low-energy EBDW is useful for exposure of practical patterns of logic devices by the CP exposure with higher throughput, because the proximity effect is so small that complicated corrections due to the adjacent pattern and structures of substrate under exposure layer are unnecessary.

Citation Download Citation

Takayuki Satoh, Ryoichi Inanami, Katsumi Kishimoto, Keizo Hirose, Tetsuro Nakasugi, Takeshi Koshiba, and Takumi Ota "Exposure characteristics of character projection-type low-energy electron-beam direct writing system", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172G (16 March 2007); https://doi.org/10.1117/12.711229

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Electron beam direct write lithography

Line width roughness

Electron beams

Silicon

Data conversion

Beam shaping

Photoresist processing

Show All Keywords

Keywords/Phrases

Search In:

Publication Years