Paper
31 May 2007 Physical modeling of a highly sensitive linear MOS sensor for 2D detection of magnetic fields
Ali Abou-Elnour, Ossama Abo-Elnor, Mohamed Y. Essam, M. Marzouk Ibrahim
Author Affiliations +
Proceedings Volume 6589, Smart Sensors, Actuators, and MEMS III; 65891P (2007) https://doi.org/10.1117/12.722107
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain
Abstract
In the present work, a rigorous two-dimensional physical simulator is developed to characterize the operation and to optimize the structure of a highly sensitive linear 2D MOSFET magnetic sensor. The magnetic field equation and the carrier transport equations are efficiently coupled and accurately solved to determine the effects of external applied magnetic field on the electrical characteristics of the MOSFET based sensor. The accuracy of the present simulator is tested for different device and circuit parameters to allow the use of it as an efficient CAD tool to fully characterize smart two-directions MOSFET magnetic sensor.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali Abou-Elnour, Ossama Abo-Elnor, Mohamed Y. Essam, and M. Marzouk Ibrahim "Physical modeling of a highly sensitive linear MOS sensor for 2D detection of magnetic fields", Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65891P (31 May 2007); https://doi.org/10.1117/12.722107
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KEYWORDS
Magnetism

Magnetic sensors

Field effect transistors

Sensors

Instrument modeling

Molybdenum

Picosecond phenomena

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