Paper
22 November 1986 Generalized Theory Of Electroreflectance With Applications To Materials Characterization
J W Garland, P M Raccah
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938535
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
A systematic study of the electrolyte electroreflectance lineshape in semiconducting alloys rich in defects has shown the necessity of generalizing the theory to include effects resulting from the interaction of the modulating electric field with local lattice instabilities and with polarizable charged defects. This generalization permits one to understand and use fully lineshapes previously considered pathological and incomprehensible. It has extended considerably the usefulness of electroreflectance and now provides detailed information on the role of specific defects such as stacking faults or antisites in the behavior of materials in device structures. This is particularly attractive, given the simplicity of the technique.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J W Garland and P M Raccah "Generalized Theory Of Electroreflectance With Applications To Materials Characterization", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938535
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Cited by 8 scholarly publications.
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KEYWORDS
Crystals

Modulation

Semiconductors

Cadmium

Infrared detectors

Scattering

Dielectrics

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