Quantum well interface broadening effects

Vladimir Gavryushin

doi:10.1117/12.726499

25 January 2007 Quantum well interface broadening effects

Vladimir Gavryushin

Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659619 (2007) https://doi.org/10.1117/12.726499
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania

Abstract

We have derived and analyzed the wavefunctions and eigenstates for quantum wells (QW), broadened due to static interface disorder, within Discreet Variable Representation (DVR) approach of Colbert and Miller. The main advantage of this approach, which we have tested, is that it allows to obtain ab-initio and to analyze the shift and broadening of resonance states in a semiconductor quantum wells of different shapes. Calculations based on the convolution methods were used to include the influence of disorder to the formation of heterojunction interfaces.

Citation Download Citation

Vladimir Gavryushin "Quantum well interface broadening effects", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659619 (25 January 2007); https://doi.org/10.1117/12.726499

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