Paper
18 June 2007 Optical scatterometry with analytic approaches applied to periodic nano-arrays including anisotropic layers
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Abstract
Optical scatterometry is being used as a powerful technique for measurement of sub-wavelength periodic structures. It is based on measuring the scattered signal and solving the inverse scattering problem. For periodic nano-arrays with feature size less than 100nm, it is possible to simplify the electromagnetic simulations using the Rytov near quasi-static approximation valid for feature periods only few times less than the wavelength. This is shown to be adequate for the determination of the structure parameters from the zero order reflected or transmitted waves and their polarization or ellipsometric properties. The validity of this approach is applied to lamellar nano-scale grating photo-resist lines on Si substrate. Formulation for structures containing anisotropic multilayers is presented using the 4x4 matrix approach.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Abdulhalim "Optical scatterometry with analytic approaches applied to periodic nano-arrays including anisotropic layers", Proc. SPIE 6617, Modeling Aspects in Optical Metrology, 661714 (18 June 2007); https://doi.org/10.1117/12.726678
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Scatterometry

Reflectivity

Critical dimension metrology

Refractive index

Near infrared

Algorithm development

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