Plasmon-phonon interaction in &#945;-Ag2Se thin films

Sh. M. Alekperova; A. A. Aliyev; Kh. D. Jalilova; G. S. Gadjiyeva

doi:10.1117/12.742526

2 May 2007 Plasmon-phonon interaction in α-Ag₂Se thin films

Sh. M. Alekperova, A. A. Aliyev, Kh. D. Jalilova, G. S. Gadjiyeva

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360S (2007) https://doi.org/10.1117/12.742526
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

For the first time on the experimental IR reflection spectra R(λ) of α -Ag₂Se films with charge carrier concentration 4,0 x 10¹⁸ cm^-3 at 300 K behind of plasma minimum (1150 cm^-1) are detected two further minimums (800 cm^-1 and 550cm^-1), stipulated by interaction of plasmon and long-wave optical (LO) phonons. It was founded the peculiarities in the behaviour of the optical function (ε₁; ε₂; -Im ε^-1) at the interaction of the free charge carrier with the polarizable ions of lattice oscillations. The frequency of longitudinal and transversal phonons is calculated.

Citation Download Citation

Sh. M. Alekperova, A. A. Aliyev, Kh. D. Jalilova, and G. S. Gadjiyeva "Plasmon-phonon interaction in α-Ag₂Se thin films", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360S (2 May 2007); https://doi.org/10.1117/12.742526

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