Near-infrared photodetectors based on mercury indium telluride single crystals

Xiaolei Zhang; Weiguo Sun; Zhengxiong Lu; Liang Zhang; Lan Zhao; JiaXin Ding; Guoqing Yan

doi:10.1117/12.756473

23 January 2008 Near-infrared photodetectors based on mercury indium telluride single crystals

Xiaolei Zhang, Weiguo Sun, Zhengxiong Lu, Liang Zhang, Lan Zhao, JiaXin Ding, Guoqing Yan

Proceedings Volume 6835, Infrared Materials, Devices, and Applications; 68350A (2008) https://doi.org/10.1117/12.756473
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the Schottky barrier. Details of oxidation process, Schottky diodes, as well as the photodetectors fabrication and characterizations are discussed.

Citation Download Citation

Xiaolei Zhang, Weiguo Sun, Zhengxiong Lu, Liang Zhang, Lan Zhao, JiaXin Ding, and Guoqing Yan "Near-infrared photodetectors based on mercury indium telluride single crystals", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350A (23 January 2008); https://doi.org/10.1117/12.756473

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