Development of single and micromorph tandem solar cells in n-i-p configuration with high-pressure RF-PECVD deposited doped and active layers

Guofu Hou; Junming Xue; Yujie Yuan; Xingyun Yang; Yunzhou Liu; Ying Zhao; Xinhua Geng

doi:10.1117/12.765754

4 January 2008 Development of single and micromorph tandem solar cells in n-i-p configuration with high-pressure RF-PECVD deposited doped and active layers

Guofu Hou, Junming Xue, Yujie Yuan, Xingyun Yang, Yunzhou Liu, Ying Zhao, Xinhua Geng

Author Affiliations +

Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68411R (2008) https://doi.org/10.1117/12.765754
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

This paper gives an overview of the scientific challenges and achievements during the development of thin film silicon based single and tandem solar cells with high-pressure RF-PECVD deposited doped and active layers. The effect of i/p interface treatment on the crystalline growth of high conductive p-type layer and the improvement of the Voc and FF of single-junction a-Si:H solar cell was studied. The role of gradient hydrogen dilution technique in the controlling the microstructural evolution of the intrinsic layer and its influence on the solar cell performance were investigated. By combining above methods, an efficiency of 5.7% (Voc=470mV, Jsc=20.2mA/cm², FF=60%) has been for a single-junction μc-Si:H solar cell. Then, the thicknesses of bottom cells and top cells were varied to achieve good current matching, which yield an efficiency of 9.9% for μc-Si:H/a-Si:H tandem solar cell with Voc of 1221mV, Jsc of 11.61mA/cm² and fill factor of 70%.

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Guofu Hou, Junming Xue, Yujie Yuan, Xingyun Yang, Yunzhou Liu, Ying Zhao, and Xinhua Geng "Development of single and micromorph tandem solar cells in n-i-p configuration with high-pressure RF-PECVD deposited doped and active layers", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411R (4 January 2008); https://doi.org/10.1117/12.765754

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