High-peak-power diode-pumped actively Q-switched Nd:YAG intracavity Raman laser with an undoped YVO4 crystal

K. W. Su; Y. T. Chang; Y. F. Chen

doi:10.1117/12.762821

5 March 2008 High-peak-power diode-pumped actively Q-switched Nd:YAG intracavity Raman laser with an undoped YVO₄ crystal

K. W. Su, Y. T. Chang, Y. F. Chen

Author Affiliations +

Proceedings Volume 6871, Solid State Lasers XVII: Technology and Devices; 68712J (2008) https://doi.org/10.1117/12.762821
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

The efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO₄crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 μJ at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz.

Citation Download Citation

K. W. Su, Y. T. Chang, and Y. F. Chen "High-peak-power diode-pumped actively Q-switched Nd:YAG intracavity Raman laser with an undoped YVO₄ crystal", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712J (5 March 2008); https://doi.org/10.1117/12.762821

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