Optical and structural properties of homoepitaxial ZnO

T. P. Bartel; M. R. Wagner; U. Haboeck; A. Hoffmann; C. Neumann; S. Lautenschläger; J. Sann; B. K Meyer

doi:10.1117/12.775217

15 February 2008 Optical and structural properties of homoepitaxial ZnO

T. P. Bartel, M. R. Wagner, U. Haboeck, A. Hoffmann, C. Neumann, S. Lautenschläger, J. Sann, B. K Meyer

Proceedings Volume 6895, Zinc Oxide Materials and Devices III; 689502 (2008) https://doi.org/10.1117/12.775217
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Two dimensional homoepitaxial growth of high quality ZnO epilayers was achieved by chemical vapor deposition techniques without a buffer layer. We report on the optical and structural properties of these epilayers with particular focus on the polarity of the surface of the substrate. Photoluminescence spectra exhibit strong dependence of the bound exciton recombinations on the termination of the substrate. This is particularly pronounced in the large variety of transition lines in the O-face terminated sample with values for the full width at half maximum as low as 80μeV. Cross-sectional micro Raman spectroscopy and high resolution transmission electron microscopy reveal the presence of strain in the epilayer grown on O-face ZnO by a shift of the non-polar E₂(high) mode and a variation in the lattice constant ratio. Still, the crystal quality of the films is further increased compared to the substrate, which is shown be a half-width of 17" of the XRD rocking curve in both epilayers on Zn-face and O-face terminated ZnO substrate.

Citation Download Citation

T. P. Bartel, M. R. Wagner, U. Haboeck, A. Hoffmann, C. Neumann, S. Lautenschläger, J. Sann, and B. K Meyer "Optical and structural properties of homoepitaxial ZnO", Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 689502 (15 February 2008); https://doi.org/10.1117/12.775217

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