Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films

Satoshi Yamauchi

doi:10.1117/12.774945

15 February 2008 Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films

Satoshi Yamauchi

Proceedings Volume 6895, Zinc Oxide Materials and Devices III; 689506 (2008) https://doi.org/10.1117/12.774945
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Plasma-assisted epitaxy has been demonstrated as one possible process for the ZnO growth, which is processed at low temperatures below 400^oC using oxygen-plasma excited by radio-frequency power at 13.56MHz. This paper is focused on the plasma-assisted epitaxial growth of ZnO layer concerned with shallow acceptor doping using N₂+O₂ gas plasma and high-quality undoped-ZnO growth using a novel buffer layer consisted of very thin (below 1nm-thick) strained Ti₂O₃ on A-sapphire. Donor-acceptor pair emission was clearly observed at 3.273eV in low temperature photoluminescence spectrum of nitrogen-doped PAE-ZnO layer grown in Zn-rich supply condition and the activation energy of the shallow acceptor was determined about 132meV. The doping feature of nitrogen related with the oxygen vacancy is also expected by the photoluminescence study. High-quality ZnO layer with smooth surface including fine hexagonal pyramids was grown on the buffer layer at the growth temperature as low as 340^oC with the photoluminescence spectrum dominated by free-exciton emissions at 10K. RHEED observations indicated the ZnO on the thin buffer layer was epitaxially grown toward c-axis with an in-plane relation ship of [-12-10]ZnO//[1-104]Al₂O₃ without any rotational domains.

Citation Download Citation

Satoshi Yamauchi "Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films", Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 689506 (15 February 2008); https://doi.org/10.1117/12.774945

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