Length dependences of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process

D. Plumwongrot; Y. Tamura; Y. Nishimoto; M. Kurokawa; T. Okumura; T. Maruyama; N. Nishiyama; S. Arai

doi:10.1117/12.762201

11 February 2008 Length dependence of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process

D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Okumura, T. Maruyama, N. Nishiyama, S. Arai

Author Affiliations +

Proceedings Volume 6902, Quantum Dots, Particles, and Nanoclusters V; 690205 (2008) https://doi.org/10.1117/12.762201
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Wire-length dependences of In-place polarization anisotropy in GaInAsP/InP quantum-wire (Q-wire) structures fabricated by dry-etching and regrowth processes were investigated using a photo luminescence (PL) measurement. The reduction of polarization anisotropy of Q-wires is expected in the shorter Q-Wires. A strain-compensated GaInAsP/InP single-quantum-well initial wafer was prepared by an organometallic-vapor-phase-epitaxy (OMVPE) system. Using electron beam lithography, Ti-mask lift-off, CH4/H2 reactive-ion-etching and OMVPE regrowth processes, various lengths (L) of the Q-wires were realized for wire-widths (W) of 11-, 14- and 18 nm. The Q-wires were measured the polarization property in normal and parallel to wire-length direction at room temperature. As a result, stronger polarization anisotropy was observed in narrower Q-Wires and reduced in shorter length of Q-Wires. Furthermore, polarization anisotropy of strained Q-Wires was predicted by taking in account of the dipole moment interaction between conduction and heavy-hole subbands optical transition. A 5-nm narrowed wire-width calculation results shows a good agreement with experimental results. This could be considered that a strain distribution in the Q-Wire induced the energy band deformation at the edge of the Q-Wire, which reduced the effective wire-width to much narrower than the actual size observed by an SEM image.

Citation Download Citation

D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Okumura, T. Maruyama, N. Nishiyama, and S. Arai "Length dependence of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process", Proc. SPIE 6902, Quantum Dots, Particles, and Nanoclusters V, 690205 (11 February 2008); https://doi.org/10.1117/12.762201

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available