Paper
13 February 2008 GaN-based light emitting diodes with large area surface nano-structures patterned by anodic aluminum oxide templates
Tao Dai, Bei Zhang, Xiangning Kang, Kui Bao, Wenzhu Zhao, Dongshen Xu, Zizhao Gan
Author Affiliations +
Abstract
We demonstrate a manufacturing approach of nanostructures on the large surface area of GaN-based LED chip to improve the light extraction efficiency. We prepared the nanoporous anodic aluminum oxide (AAO) template on an aluminum foil by the conventional two-step anodization. Using the AAO template as etching mask, we successfully transferred the nanoporous structures to the surfaces of GaN-based LEDs by inductively coupled plasma dry etching. About a quarter of two-inch GaN-based LED chip was patterned by the nanostructures. The pore spacing was modulated from 100 nm to 400 nm. The improvement of light extraction efficiency of the device was achieved. A light output power enhancement of 42% was obtained from the p-side surface nanopatterned LEDs compared to the conventional LEDs on the same wafer at 20 mA. This approach offers a potential technique of nanostructures fabrication on GaNbased LEDs with the advantages of large area, rapid process and low cost.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tao Dai, Bei Zhang, Xiangning Kang, Kui Bao, Wenzhu Zhao, Dongshen Xu, and Zizhao Gan "GaN-based light emitting diodes with large area surface nano-structures patterned by anodic aluminum oxide templates", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100P (13 February 2008); https://doi.org/10.1117/12.763416
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Cited by 1 scholarly publication and 4 patents.
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KEYWORDS
Light emitting diodes

Nanostructures

Etching

Gallium nitride

Optical lithography

Aluminum

Nanolithography

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